Method and system for proximity effect and dose correction for a particle beam writing device
US7902528B2 · kind B2 · utility
17Cited by
15References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2006 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Jul 17, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of particle beam lithography includes selecting at least two cell patterns from a stencil, correcting proximity effect by dose control and by pattern modification for the at least two cell patterns, and writing the at least cell two patterns by one shot of the particle beam after proximity effect correction (PEC).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.