Magnetic memory devices using magnetic domain dragging
US7902579B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2006 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Aug 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a memory region, an input and a sensor. The memory region includes a free layer, a pinned layer and a non-magnetic layer. The free layer has adjacent sectors and a magnetic domain wall. The pinned layer corresponds to the sectors and has a fixed magnetization direction. The non-magnetic layer is formed between the free layer and the pinned layer. The memory region includes a magnetic domain wall stopper for stopping the magnetic domain wall formed at each boundary of the sectors. The input is electrically connected to one end of the free layer for inputting a signal for magnetic domain dragging. The sensor measures a current flowing through the memory region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.