Semiconductor device and method for its manufacture

US7902626B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Alfred Goerlach · Tübingen, DE
• Ning Qu · Beijing, CN

Key dates

• Filing date: Oct 13, 2005
• Grant date: Mar 8, 2011
• Expiry date: Dec 26, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/106

Abstract

In semiconductor devices and methods for their manufacture, the semiconductor devices are arranged as a trench-Schottky-barrier-Schottky diode having a pn diode as a clamping element (TSBS-pn), and having additional properties compared to usual TSBS elements which make possible adaptation of the electrical properties. The TSBS-pn diodes are produced using special manufacturing methods, are arranged in their physical properties such that they are suitable for use in a rectifier for a motor vehicle generator, and are also able to be operated as Z diodes.