Layered structure, electron device, and an electron device array having a variable wettability layer and semiconductor layer formed thereon

US7902680B2 · kind B2 · utility

Assignee

• RICOH COMPANY, LTD. · JP

Inventors

• Takanori Tano · Yokohama, JP
• Koh Fujimura · Tokyo, JP
• Hidenori Tomono · Yokohama, JP
• Hitoshi Kondoh · Yokohama, JP

Key dates

• Filing date: Aug 26, 2009
• Grant date: Mar 8, 2011
• Expiry date: Aug 26, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0321

Abstract

A layered structure comprises a variable wettability layer including a material that changes a critical surface tension in response to energy provided thereto, the wettability changing layer including at least a high surface energy part of large critical surface tension and a low surface energy part of low critical surface tension, a conductive layer formed on the variable wettability layer at the high surface energy tension part, and a semiconductor layer formed on the variable wettability layer at the low surface energy part.