Thin film transistor substrate and method of manufacturing the same
US7903188B2 · kind B2 · utility
3Cited by
1References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 4, 2007 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Dec 23, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a liquid crystal display device includes forming a gate electrode; forming a gate insulator on the gate electrode, an active layer on the gate insulator, and an etch stopper on the active layer; depositing an ohmic contact layer, a first metal layer and a second metal layer on the substrate; etching the ohmic contact layer, and the first and second metal layers to form ohmic contact patterns, and first and second metal patterns including source, drain and pixel electrodes using a single photomask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.