Separate confinement heterostructure with asymmetric structure and composition
US7903711B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2009 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Nov 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3436
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A separate confinement heterostructure includes a quantum-well layer bounded by an n-side waveguide layer and a p-side waveguide layer. The waveguide layers guide a lasing mode of the heterostructure. The n-side waveguide layer is composed of indium gallium phosphide (InGaP) and the p-side layer is composed of aluminum gallium arsenide (AlGaAs). The heterostructure is configured such that more than 80% of the optical mode propagates in the n-side waveguide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.