Patent · US Active

Separate confinement heterostructure with asymmetric structure and composition

US7903711B1 · kind B1 · utility

2Cited by
9References
17Claims
0Family size

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Key dates

Filing dateNov 13, 2009
Grant dateMar 8, 2011
Priority date
Expiry dateNov 13, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/3436
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A separate confinement heterostructure includes a quantum-well layer bounded by an n-side waveguide layer and a p-side waveguide layer. The waveguide layers guide a lasing mode of the heterostructure. The n-side waveguide layer is composed of indium gallium phosphide (InGaP) and the p-side layer is composed of aluminum gallium arsenide (AlGaAs). The heterostructure is configured such that more than 80% of the optical mode propagates in the n-side waveguide layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.