Methods for forming a ruthenium-based film on a substrate
US7906175B2 · kind B2 · utility
3Cited by
22References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2008 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Apr 6, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4481
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.