Organic insulator composition comprising high dielectric constant insulator dispersed in hyperbranched polymer and organic thin film transistor using the same
US7906206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2005 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Jul 10, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/25
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An organic insulator composition comprising a high dielectric constant insulator dispersed in a hyperbranched polymer and an organic thin film transistor using the insulator composition. More specifically, the organic thin film transistor comprises a substrate, a gate electrode, a gate insulating layer, a source electrode, a drain electrode and an organic semiconductor layer wherein the gate insulating layer is made of the organic insulator composition. The use of the insulator composition in the formation of a gate insulating layer allows the gate insulating layer to be uniformly formed by spin coating at room temperature, as well as enables fabrication of an organic thin film transistor simultaneously satisfying the requirements of high charge carrier mobility and low threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.