Light emitting nanowire device
US7906354B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2010 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Mar 30, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/882
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Method of making a light emitting semiconductor nanowire device includes providing a plurality of spaced light emitting semiconductor nanowires on a growth substrate; applying a dielectric material disposed between the semiconductor nanowires producing a layer of embedded semiconductor nanowires having a top surface opposed to a bottom surface, wherein the bottom surface is defined by the interface with the growth substrate; depositing a first electrode over the top surface in electrical contact with the nanowires; joining the first electrode to a device substrate; removing the growth substrate and exposing the bottom surface of the layer of embedded nanowires; depositing a second electrode on the bottom surface of the nanowires so that it is in electrical contact with the nanowires; and wherein either the first or second electrode is transparent to permit light to be transmitted from the light emitting semiconductor nanowires through the transparent electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.