Semiconductor device and method of fabricating the same
US7906386B2 · kind B2 · utility
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16Claims
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Assignee
Inventor
Key dates
| Filing date | Aug 29, 2008 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Jun 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/761
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device capable of preventing malfunction of a Schottky diode to reduce a failure ratio of the semiconductor device and a method for fabricating the same are disclosed. The semiconductor device includes first and second CMOS switching devices formed over a silicon substrate, a Schottky diode formed in a Schottky diode region, and a Schottky diode isolation film surrounding the Schottky diode region and isolating the Schottky diode from the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.