Semiconductor thin film and method for manufacturing same, and thin film transistor
US7906777B2 · kind B2 · utility
56Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2006 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Jul 29, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/40
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention provides a semiconductor thin film which can be manufactured at a relatively low temperature even on a flexible resin substrate. As a semiconductor thin film having a low carrier concentration, a high Hall mobility and a large energy band gap, an amorphous film containing zinc oxide and tin oxide is formed to obtain a carrier density of 10+17 cm−3 or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 eV or more. Then, the amorphous film is oxidized to form a transparent semiconductor thin film 40.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.