Manufacturing process of transflective pixel structure
US7907244B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 5, 2010 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Oct 5, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/104
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A transflective pixel structure including a scan line, a data line, a thin film transistor, a pixel electrode and an organic material layer is provided. The scan line and the data line are disposed over a substrate. The thin film transistor is disposed over the substrate and electrically connected to the scan line and the data line. The pixel electrode is disposed over a substrate and is electrically connected to the thin film transistor. The pixel electrode has a reflective region and a transmissive region. The organic material layer covers both the thin film transistor and the pixel electrode. The organic material layer disposed correspondently above the transmissive region of the pixel electrode has a plurality of refracting patterns on its upper surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.