Film quality evaluation method, apparatus therefor, and production system for thin-film device
US7907276B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Oct 31, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/8422
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An object is to improve production efficiency as well as reducing the burden on an operator. Light is radiated on a crystalline silicon film used for a thin-film silicon device, reflection light reflected by the crystalline silicon film is detected, a parameter of the luminance of the detected reflection light is measured, and film quality evaluation of the crystalline silicon film is performed in accordance with whether the parameter of the luminance is within a predetermined proper range or not.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.