Electrostatic chuck
US7907383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2007 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Mar 9, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/85
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention provides an electrostatic chuck in which the surface can be kept smooth after being exposed to plasma, so as to protect a material to be clamped such as a silicon wafer from being contaminated with particles, and which is excellent in clamping and releasing a material to be clamped and easy to manufacture by low-temperature firing. The electrostatic chuck includes a dielectric material in which alumina is 99.4 wt % or more, and titanium oxide is more than 0.2 wt % and equal to or less than 0.6 wt %, wherein the electrostatic chuck's volume resistivity is 108-1011 Ωcm in room temperature, and wherein the titanium oxide segregates in boundaries of particles of the alumina.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.