Silicon integrated angular rate sensor
US7908922B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2008 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Jun 5, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01C19/5684
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A motion sensor in the form of an angular rate sensor and a method of making a sensor are provided and includes a support substrate and a silicon sensing ring supported by the substrate and having a flexive resonance. Drive electrodes apply electrostatic force on the ring to cause the ring to resonate. Sensing electrodes sense a change in capacitance indicative of vibration modes of resonance of the ring so as to sense motion. A plurality of silicon support rings connect the substrate to the ring. The support rings are located at an angle to substantially match a modulus of elasticity of the silicon, such as about 22.5 degrees and 67.5 degrees, with respect to the crystalline orientation of the silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.