Materials for photoresist, photoresist composition and method of forming resist pattern
US7910284B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 15, 2007 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Aug 22, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/106
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
To overcome the problem that a device performance is degraded by the edge roughness of a photoresist pattern, a mixture of polynuclear phenol compounds having, in one molecule, 0 to 6 functional groups which are chemically converted due to actions of an acid with the solubility in an alkaline developer reduced is used as a material for photoresist. In the mixture, two or more triphenyl methane structures are bonded to portions other than the functional group in the nonconjugated state. Furthermore, the mixture comprises polynuclear compounds with the average number of functional groups of 2.5 or below and includes the polynuclear compounds not having any functional group per molecule by 15% or less in the term of weight ratio, and the polynuclear phenol compounds having 3 or more functional groups per molecule by 40% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.