Semiconductor light-emitting device with selectively formed buffer layer on substrate
US7910388B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 22, 2008 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Jun 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
Abstract
The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer layer, a multi-layer structure, and an ohmic electrode structure. The buffer layer is selectively formed on an upper surface of the substrate such that the upper surface of the substrate is partially exposed. The multi-layer structure is formed to overlay the buffer layer and the exposed upper surface of the substrate. The multi-layer structure includes a light-emitting region. The buffer layer assists a bottom-most layer of the multi-layer structure in lateral and vertical epitaxial growth. The ohmic electrode structure is formed on the multi-layer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.