Patent · US Active

Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid

US7910393B2 · kind B2 · utility

13Cited by
5References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 29, 2009
Grant dateMar 22, 2011
Priority date
Expiry dateJun 29, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02658
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles—comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.