Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid
US7910393B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2009 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Jun 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles—comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.