Patent · US Active

LED structure

US7910395B2 · kind B2 · utility

16Cited by
3References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 13, 2006
Grant dateMar 22, 2011
Priority date
Expiry dateJan 25, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/857
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An LED structure includes a first substrate; an adhering layer formed on the first substrate; first ohmic contact layers formed on the adhering layer; epi-layers formed on the first ohmic contact layers; a first isolation layer covering the first ohmic contact layers and the epi-layers at exposed surfaces thereof; and first electrically conducting plates and second electrically conducting plates, both formed in the first isolation layer and electrically connected to the first ohmic contact layers and the epi-layers, respectively. The trenches allow the LED structure to facilitate complex serial/parallel connection so as to achieve easy and various applications of the LED structure in the form of single structures under a high-voltage environment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.