Transparent nanowire transistors and methods for fabricating same

US7910932B2 · kind B2 · utility

Assignees

• Northwestern University · US
• Purdue Research Foundation · US
• University of Southern California · US

Inventors

• Tobin J. Marks · Evanston, US
• David B. Janes · West Lafayette, US
• Sanghyun Ju · Seoul, KR
• Peide Ye · High Bridge, US
• Chongwu Zhou · Arcadia, US
• Antonio Facchetti · Chicago, US

Key dates

• Filing date: Jun 2, 2008
• Grant date: Mar 22, 2011
• Expiry date: Aug 8, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/121
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.