Light-emitting diode apparatus and manufacturing method thereof

US7910941B2 · kind B2 · utility

Assignee

• Delta Electronics, Inc. · TW

Inventors

• Shih-Peng Chen · Daxi District, TW
• Ching-Chuan Shiue · Daxi District, TW
• Chao-Min Chen · Fujian, CN
• Horng-Jou Wang · Taoyuan, TW
• Huang-Kun Chen · Daxi District, TW

Key dates

• Filing date: Mar 28, 2008
• Grant date: Mar 22, 2011
• Expiry date: Dec 13, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/882

Abstract

A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.