Semiconductor device

US7910957B2 · kind B2 · utility

Assignee

• FUJITSU SEMICONDUCTOR LIMITED · JP

Inventors

• Junichi Mitani · Kawasaki, JP
• Satoshi Nakai · Osaka, JP
• Kazushi Fujita · Kuwana, JP

Key dates

• Filing date: Dec 23, 2008
• Grant date: Mar 22, 2011
• Expiry date: Jan 9, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A semiconductor device has a first and a second active regions of a first conductivity type disposed on a semiconductor substrate, a third and a fourth active regions of a second conductivity type disposed on the semiconductor substrate, the second and the fourth active regions having sizes larger than those of the first and the third active regions respectively, a first electroconductive pattern disposed adjacent to the first active region and having a first width, a second electroconductive pattern disposed adjacent to the second active region and having a second width larger than the first width, a third electroconductive pattern disposed adjacent to the third active region and having a third width; and a fourth electroconductive pattern disposed adjacent to the fourth active region and having a fourth width smaller than the third width.