SOI trench lateral IGBT
US7910962B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 13, 2008 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Sep 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
To enable driving at a high withstand voltage and a large current, increase latchup immunity, and reduce ON resistance per unit area in an IGBT, a trench constituted by an upper stage trench and a lower stage trench is formed over an entire wafer surface between an n+ emitter region and a p+ collector region, and the trench is filled with a trench-filling insulating film. Thus, a drift region for supporting the withstand voltage is folded in the depth direction of the wafer, thereby lengthening the effective drift length. An emitter-side field plate is buried in the trench-filling insulating film to block a lateral electric field generated on the emitter side of the trench-filling insulating film, and as a result, an electric field generated at a PN junction between an n− drift region and a p base region is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.