Source for providing an electron beam of settable power
US7911120B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2002 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Oct 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0041
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention concerns a source supplying an adjustable energy electron beam, comprising a plasma chamber (P) consisting of an enclosure (1) having an inner surface of a first value (S1) and an extraction gate (2) having a surface of a second value (S2), the gate potential being different from that of the enclosure and adjustable. The invention is characterized in that the plasma is excited and confined in multipolar or multidipolar magnetic structures, the ratio of the second value (S2) over the first value (S1) being close to: D=1/β √2πme/mi exp (−½), wherein: β is the proportion of electrons of the plasma P, me the electron mass, and mi is the mass of positively charged ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.