Patent · US Active

Electron emission thin-film, plasma display panel and methods for manufacturing

US7911142B2 · kind B2 · utility

0Cited by
6References
22Claims
0Family size

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Inventors

Key dates

Filing dateNov 27, 2006
Grant dateMar 22, 2011
Priority date
Expiry dateMar 5, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J11/12
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Disclosed are an electron emission thin-film with improved secondary electron emission characteristics compared with conventional ones, a plasma display panel including the electron emission thin-film, and their manufacturing methods. Using a vacuum deposition system, a protective layer that is an MgO thin-film is formed on a dielectric layer formed on a front glass substrate. At the time of deposition, angles that lines linking the central point of a target material for the protective layer respectively with the central point and both ends points of the front glass substrate form with the front glass substrate are exclusively in a range of 30 to 80°. This enables at least some of MgO columnar crystals constituting the protective layer to have flat planes that are inclined with respect to the surface of the thin-film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.