Substrate bias circuit and method for integrated circuit device
US7911261B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 13, 2009 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Apr 13, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/08
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A substrate biasing circuit may include a first pump control circuit that generates a first control signal in response to a first reference voltage and a voltage of a first substrate portion, and includes a first reference generator coupled between a temperature compensated voltage and a reference power supply voltage that varies the first reference voltage in response to the voltage of the first substrate voltage and the temperature compensated voltage. A first clamp circuit may generate a first clamp signal in response to a first limit voltage and the voltage of the first substrate portion, the first limit voltage being a scaled version of the temperature compensated voltage. A first charge pump may pump the first substrate portion in at least a first voltage direction in response to the first control signal, and is prevented from pumping in the first voltage direction in response to the first clamp signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.