Multilayer chip varistor and electronic component
US7911317B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2009 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Sep 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16225
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A multilayer chip varistor is provided as one having excellent heat radiation performance. A thickness between a first principal face 3 and an outermost internal electrode layer 11A is smaller than a thickness between an internal electrode layer 21 and the outermost internal electrode layer 11A, and because of this configuration, heat generated from a bottom face of a semiconductor light emitting device LE1 is efficiently transferred to the outermost internal electrode layer 11A having a high thermal conductivity. Furthermore, in the multilayer chip varistor V1 of an electronic component EC1, the outermost internal electrode layer 11A has a first internal electrode 13 electrically connected to a first connection electrode 7 and a first terminal electrode 5 through first through-hole conductors 17, and a second internal electrode 15 electrically connected to a second connection electrode 8 and a second terminal electrode 6 through second through-hole conductors 27. Because of this configuration, heat H generated from the semiconductor light emitting device LE1 is transferred to both the first internal electrode 13 and the second internal electrode 15, so as to be transferred to the …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.