Memory cell programming method and semiconductor device for simultaneously programming a plurality of memory block groups
US7911842B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2008 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Sep 2, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided are a memory cell programming method and a semiconductor device which may be capable of simultaneously writing a bit of data and then another bit of the data to a plurality of memory blocks. The memory programming method, in which M bits of data are written to a plurality of memory blocks, may include a data division operation and a data writing operation where M may be a natural number. In the data division operation, the plurality of memory blocks may be divided into a plurality of memory block groups. In the data writing operation, an ith bit of the data may be simultaneously written to two or more memory block groups from among the plurality memory block groups, and then an i+1th bit of the data may be simultaneously written to the two or more memory block groups from among the plurality memory block groups, where i is a natural number less than M.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.