Memory device and memory data determination method
US7911848B2 · kind B2 · utility
60Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2009 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Sep 11, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device and a memory data determination method are provided. The memory device may estimate a threshold voltage shift of a first memory cell based on data before the first memory cell is programmed and a target program threshold voltage of the first memory cell. The memory device may generate a metric of a threshold voltage shift of a second memory cell based on the estimated threshold voltage shift of the first memory cell. Also, the memory device may determine data stored in the second memory cell based on the metric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.