Method for chemical mechanical planarization of chalcogenide materials
US7915071B2 · kind B2 · utility
11Cited by
20References
15Claims
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Key dates
| Filing date | Aug 18, 2008 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Sep 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.