Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
US7915151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2006 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Dec 14, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.