Laser diffusion fabrication of solar cells
US7915154B2 · kind B2 · utility
10Cited by
4References
20Claims
0Family size
Inventor
Key dates
| Filing date | Sep 2, 2009 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Sep 12, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of semiconductor junction formation in Laser diffusion process for fabrication of solar cells provides for delivery of inert gases in the vicinity of the Si wafer while dopant species are being diffused form a dopant source into the surface of the wafer irradiated by a laser beam. The laser beam is emitted by CW- or pulsed operated lasers including fiber lasers. Optionally, the passivation of the surface and formation of the antireflection coating are performed simultaneously with the diffusion of the dopant species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.