Phase change memory device and fabrication method thereof

US7915602B2 · kind B2 · utility

Assignee

• ELPIDA MEMORY, INC. · JP

Inventor

• Natsuki Sato · Kawanishi, JP

Key dates

• Filing date: Mar 3, 2009
• Grant date: Mar 29, 2011
• Expiry date: Sep 19, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A phase change memory device is provided in which the area of contact between phase change material and heater electrode is reduced to suppress current required for heating and a phase change region is formed directly on a contact to raise the degree of integration. The device comprises a heater electrode in which the lower part thereof is surrounded by a side wall of a first insulating material and the upper part thereof protruding from the side wall has a sharp configuration covered by a second insulating material except for a part of the tip end thereof, and the exposed tip end is coupled to the phase change material layer.