Patent · US Active

Light-emitting device, electronic apparatus, and light-emitting device manufacturing method

US7915620B2 · kind B2 · utility

2Cited by

1References

8Claims

0Family size

Assignee

SONY GROUP CORPORATION · JP

Inventors

Yuichi Ishida · Nagoya, JP
Kazuaki Yazawa · Chiba, JP
Norikazu Nakayama · Osaka, JP

Key dates

Filing date	Feb 11, 2009
Grant date	Mar 29, 2011
Priority date	—
Expiry date	Mar 14, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/173
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Disclosed is a light-emitting device. The light-emitting device includes an EL layer and a heat dissipation layer. The EL layer includes a first semiconductor layer, a second semiconductor layer, and an active layer, the first semiconductor layer having a first conductivity type that is one of n type and p type, the second semiconductor layer having a second conductivity type that is opposite to the first conductivity type, the active layer being provided between the first semiconductor layer and the second semiconductor layer. The heat dissipation layer has the first conductivity type and is bonded to a side of the EL layer closer to the second semiconductor layer than the first semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.