Symmetric bidirectional silicon-controlled rectifier
US7915638B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2008 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Apr 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/80
Abstract
The present invention discloses a symmetric bidirectional silicon-controlled rectifier, which comprises: a substrate; a buried layer formed on the substrate; a first well, a middle region and a second well, which are sequentially formed on the buried layer side-by-side; a first semiconductor area and a second semiconductor area both formed inside the first well; a third semiconductor area formed in a junction between the first well and the middle region, wherein a first gate is formed over a region between the second and third semiconductor areas; a fourth semiconductor area and a fifth semiconductor area both formed inside the second well; a sixth semiconductor area formed in a junction between the second well and the middle region, wherein a second gate is formed over a region between the fifth and sixth semiconductor areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.