InGaAsSbN photodiode arrays
US7915639B2 · kind B2 · utility
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Key dates
| Filing date | Oct 20, 2008 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Jan 15, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.
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