Patent · US Active

Semiconductor integrated circuit

US7915657B2 · kind B2 · utility

2Cited by

4References

9Claims

0Family size

Assignee

SONY GROUP CORPORATION · JP

Inventors

Nobukazu Mikami · Saitama, JP
Hiroki Usui · Chiba, JP
Takuya Nakauchi · Yokohama, JP

Key dates

Filing date	Dec 24, 2009
Grant date	Mar 29, 2011
Priority date	—
Expiry date	Dec 24, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/4125
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Disclosed herein is a semiconductor integrated circuit including: a memory circuit section used for storing data; and a non-memory circuit section which is provided to serve as a section other than the memory circuit section and used for storing no data, wherein the second-conduction-type impurity concentration of a second-conduction-type semiconductor area including a channel created for a first-conduction-type transistor employed in the non-memory circuit section is lower than the second-conduction-type impurity concentration of a second-conduction-type semiconductor area including a channel created for a first-conduction-type transistor employed in the memory circuit section.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.