Lateral diffused metal oxide semiconductor device
US7915674B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2008 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Apr 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
An exemplary lateral diffused metal oxide semiconductor device includes a first-type substrate, a gate oxide film disposed on the first-type substrate, a poly gate disposed on the gate oxide film, a first second-type slightly doped region formed in the first-type substrate and acting as a well, a first first-type highly doped region formed in the well and acting as a body, a first second-type highly doped region formed in the body and acting as a source, a second second-type highly doped region formed in the well and acting as a drain, a second first-type highly doped region formed in the body, and a first first-type doped region formed in the body and is beneath the source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.