Gate drive circuitry for non-isolated gate semiconductor devices
US7915944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2009 |
| Grant date | Mar 29, 2011 |
| Priority date | — |
| Expiry date | Jun 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0036
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
One embodiment is a gate drive circuitry for switching a semiconductor device having a non-isolated input, the gate drive circuitry having a first circuitry configured to turn-on the semiconductor device by imposing a current on a gate of the semiconductor device so as to forward bias an inherent parasitic diode of the semiconductor device. There is a second circuitry configured to turn-off the semiconductor device by imposing a current on the gate of the semiconductor device so as to reverse bias the parasitic diode of the semiconductor device wherein the first circuitry and the second circuitry are coupled to the semiconductor device respectively through a first switch and a second switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.