Laser crystallization method for amorphous semiconductor thin film
US7919366B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 9, 2009 |
| Grant date | Apr 5, 2011 |
| Priority date | — |
| Expiry date | Oct 9, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laser crystallization method in which an amorphous silicon thin film 2 formed on a substrate 1 is irradiated with a laser beam, the method including the steps of providing the amorphous silicon thin film 2 with an absorbent to form an absorbent layer 3 on the desired specific local areas of the amorphous silicon thin film 2 and laser annealing for crystallizing the specific local areas of the amorphous silicon thin film 2 by irradiating the amorphous silicon thin film 2 including the specific local areas with a semiconductor laser beam L having a specific wavelength absorbable by the absorbent layer 3 and unabsorbable by the amorphous silicon thin film 2 for heating the absorbent layer 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.