Method of fabricating an organic thin film transistor
US7919396B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2009 |
| Grant date | Apr 5, 2011 |
| Priority date | — |
| Expiry date | Apr 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/113
Abstract
An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.