Patent · US Active

Spinel wafers and methods of preparation

US7919815B1 · kind B1 · utility

1Cited by
72References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 1, 2006
Grant dateApr 5, 2011
Priority date
Expiry dateNov 23, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/974

Abstract

Wafer suitable for semiconductor deposition application can be fabricated to have low bow, warp, total thickness variation, taper, and total indicated reading properties. The wafers can be fabricated by cutting a boule to produce rough-cut wafers, lapping the rough-cut wafers, etching the lapped wafers to remove a defect, deformation zone and relieve residual stress, and chemically mechanically polishing the etched wafers to desired finish properties. Etching can be performed by immersion in a heated etching solution comprising sulfuric acid or a mixture of sulfuric and phosphoric acids. A low pH slurry utilized in chemical mechanical polishing of the spinel wafer can comprise α-Al2O3 and an organic phosphate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.