Photoconductor formulation containing boron nitride
US7920805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2007 |
| Grant date | Apr 5, 2011 |
| Priority date | — |
| Expiry date | Aug 18, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G2215/00957
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure relates to incorporation of boron nitride in the charge transport layer of a photoconductor. The boron nitride may have an aspect ratio of greater than 1.0, a D50 mean particle size of less than about 10.0 μm and be present at about 5.0% (wt) or less in the charge transport layer. The cartridge may also include toner particles wherein the toner particles have a size range of about 1-25 μm and an average degree of circularity of about 0.90-1.0. The photoconductor containing boron nitride when used in an electrophotographic printer may then provide acceptable dark decay and/or photoinduced decay (PID) curves relative to photoconductors that do not contain boron nitride along with improved resistance to toner filming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.