Low-defect-density crystalline structure and method for making same
US7923098B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2008 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Jan 16, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2495
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low-defect-density crystalline structure comprising a first crystalline material, a layer of second crystalline material epitaxially grown on the first crystalline material, and a layer of third crystalline material epitaxially grown on the second layer such that the second layer is positioned between the first crystalline material and the third crystalline material. The second and third crystalline materials cooperate to form a desirable relationship. The crystalline structures of the second crystalline material and third crystalline material have a higher crystalline compatibility than the first crystalline material and third crystalline material. The layer of second crystalline material is sufficiently thick to form the desirable relationship with the third crystalline material but sufficiently thin for the layer of second crystalline material to be strained. The layer of third crystalline material is grown to a thickness beyond a thickness had the third layer been grown on an unstrained second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.