Mask and method of manufacturing the same
US7923176B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2008 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | May 15, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask includes a transparent substrate, a light-blocking layer and a halftone layer. The light-blocking layer includes a source electrode pattern portion including a first electrode portion, a second electrode portion and a third electrode portion, and a drain electrode pattern portion disposed between the second electrode portion and the third electrode portion. The halftone layer includes a halftone portion corresponding to a spaced-apart portion between the source electrode pattern portion and the drain electrode pattern portion, and a dummy halftone portion more protrusive than ends of the second electrode portion and the third electrode portion. Thus, a photoresist pattern corresponding to a channel portion of a thin film transistor (TFT) may be formed with a uniform thickness, to thereby prevent an excessive etching of the channel portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.