Method of manufacturing fine T-shaped electrode
US7923198B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 11, 2005 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Jun 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a fine T-shaped electrode includes a step of forming a laminated resist which includes at least a photoresist layer as an uppermost layer; a step of forming an uppermost layer opening by irradiating the laminated resist with light to pattern only the photo resist layer and form an uppermost layer opening; a step of reducing the diameter of the uppermost layer opening by coating a resist pattern thickening material on the photoresist layer; a step of forming a lowermost layer opening by transferring the uppermost layer opening formed in the photoresist layer to a lower layer of the photoresist, and penetrating the laminated resist; a step of reducing the size of the lowermost opening in the lowermost layer of the laminated resist; and a step of forming a T-shaped electrode in the opening part formed through the laminated resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.