Thin film transistor substrate having transparent conductive metal and method of manufacturing the same
US7923287B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2007 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Feb 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
Abstract
A thin film transistor substrate and a method of manufacturing the same are disclosed. The method of manufacturing a thin film transistor substrate includes forming a first conductive pattern group including a gate line, a gate electrode, and a lower gate pad electrode on a substrate, forming a gate insulating layer on the substrate on which the first conductive pattern group is formed, forming an oxide semiconductor pattern overlapping the gate electrode on the gate insulating layer, and forming first and second conductive layers on the substrate on which the oxide semiconductor pattern is formed and patterning the first and second conductive layers to form a second conductive pattern group including a data line, a source electrode, a drain electrode, and a data pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.