Higher selectivity, method for passivating short circuit current paths in semiconductor devices
US7923341B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2009 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Jun 3, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
Abstract
A method for passivating short circuit defects in a thin film large area photovoltaic device in accordance with an exemplary embodiment is provided. The method employs a passivation agent and a counter electrode disposed in said passivation agent. The method includes controlling an application of current between the substrate of said photovoltaic device and said counter electrode so as to ensure high selectivity of modification of a transparent conductive oxide material of said photovoltaic module adjacent said short circuit defect, while leaving the transparent conductive oxide material of said photovoltaic module of non-defect areas in its unmodified form.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.