Methods for preparation of high-purity polysilicon rods using a metallic core means
US7923358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2009 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Dec 1, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2913
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method for preparing a polysilicon rod using a metallic core means, comprising: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, wherein the core means is constituted by forming one or a plurality of separation layer(s) on the surface of a metallic core element and is connected to an electrode means; heating the core means by supplying electricity through the electrode means; and supplying a reaction gas into the inner space for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means. According to the present invention, the deposition output and the core means can be separated easily from the silicon rod output obtained by the process of silicon deposition, and the contamination of the deposition output caused by impurities of the metallic core element can be minimized, thereby a high-purity silicon can be prepared in a more economic and convenient way.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.