Bipolar transistor with a low saturation voltage
US7923751B2 · kind B2 · utility
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11References
14Claims
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Key dates
| Filing date | Jul 12, 2004 |
| Grant date | Apr 12, 2011 |
| Priority date | — |
| Expiry date | Jul 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/281
Abstract
A bipolar transistor with a specific area resistance less than about 500 mOhms·mm2 comprises a first semiconductor region of a first conductivity type defining a collector region (2). A second semiconductor region of a second conductivity type defines a base region (3). A third semiconductor region of the first conductivity type defines an emitter region (4). A metal layer provides contacts (6, 7) to said base (3) and emitter regions (4). The metal layer has thickness greater than about 3 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.